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AP20GT60I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ. =1.8V@IC=20A ▼ RoHS Compliant Product AP20GT60I RoHS-compliant Product N-.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A ▼ RoHS Compliant Product AP20GT60I RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR GC E TO-220CFM(I) VCES IC G 600V 20A C Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM PD@TC=25oC TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 600 +20 40 20 160 25 -55 to 150 150 E Units V V A A A W ℃ ℃ Notes: 1.Pulse width limited by Max. junction temperature .
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