AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET

APM

Description

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AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET The AP20G03BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge.

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Datasheet Specifications

Part number: AP20G03BDF
Manufacturer: APM
File Size: 1.30 MB
Datasheet: AP20G03BDF-APM.pdf
Description: 30V N+P-Channel Enhancement Mode MOSFET

Features

* VDS = 30V ID =20A RDS(ON)

Applications

* , should be limited by total power dissipation. 2 AP20G03BDF REV1.0 AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET P-Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS lGSS Drain-Source Breakdown Voltage Gate-body

AP20G03BDF Distributors

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AP20G03BDF 30V N +P-Channel Enhancement Mode MOSFET APM

APM AP20G03BDF-like datasheet