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AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET

AP20G03BDF Description

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AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET The AP20G03BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge.

AP20G03BDF Features

* VDS = 30V ID =20A RDS(ON)

AP20G03BDF Applications

* , should be limited by total power dissipation. 2 AP20G03BDF REV1.0 AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET P-Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS lGSS Drain-Source Breakdown Voltage Gate-body

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Datasheet Details

Part number
AP20G03BDF
Manufacturer
APM
File Size
1.30 MB
Datasheet
AP20G03BDF-APM.pdf
Description
30V N+P-Channel Enhancement Mode MOSFET

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30V N +P-Channel Enhancement Mode MOSFET APM
APM AP20G03BDF-like datasheet