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AP1A003P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

AP416A00403sesreierisesaarerefrforomm AAddvvaanncceedd PPoowweerr innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP1A003P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S BVDSS RDS(ON) ID4 30V 2.1mΩ 120A Description AP416A00403sesreierisesaarerefrforomm AAddvvaanncceedd PPoowweerr innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialiTnhdeusTtrOia-l220thrpoaucgkhagehoisle widaeplpylicparetiofenrsre. d Tfohrealllocwommtheerrcmiaal-l rinedsuisstatrniacle athnrdoulogwh phaockleageapcpolsictactioonntsri.
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