AP1003BST
Description
The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling patible. The Green FETTM package is patible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters.
Green FETTM
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ ID@TC=25℃ IDM PD@TA=25℃ PD@TA=70℃ PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1 3 3 4 5 3 3 4
Rating 30 +20 17.3 14.3 75 150 2.2 1.4 42 28.8 24 -40 to 150 -40 to 150
Units V V A A A A W W W m J A ℃ ℃
Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current
Single Pulse Avalanche Energy Storage Temperature Range
Operating...
