AP1001BSQ
Description
The AP1001BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling patible. The Green FETTM package is patible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters.
Green FETTM
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ ID@TC=25℃ IDM PD@TA=25℃ PD@TA=70℃ PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1 3 3 4 5 3 3
Rating 30 +20 15 12 59 120 2.2 1.4 34 28.8 24 -40 to 150 -40 to 150
Units V V A A A A W W W m J A ℃ ℃
Continuous Drain Current, V GS @ 10V4 Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Single Pulse...
