Download AP1002BMX-3 Datasheet PDF
Advanced Power Electronics Corp
AP1002BMX-3
Description The AP1002BMX-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology Green FET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The Green FET package is patible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters. Green FETTM S D G S D Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA= 70°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Rating 30 ±20 32 25 180 250 2.8 1.8 89 Units V V A A A A W W W m J A °C °C Continuous Drain Current Pulsed Drain Current 1 3 3 4 Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current Single Pulse Avalanche Energy Storage Temperature Range 28.8 24 -40 to 150 -40 to 150 Operating...