AP1003BST-3
Description
The AP1003BST-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology Green FET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The Green FETTM package is patible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters.
Green FETTM
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA= 70°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
Rating 30 ±20 17.3 14.3 75 150 2.2 1.4 42
Units V V A A A A W W W m J A °C °C
Continuous Drain Current Pulsed Drain Current
1 3 3 4
Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current
Single Pulse Avalanche Energy Storage Temperature Range
28.8 24 -40 to 150 -40 to 150
Operating...
