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AP1003BST-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The AP1003BST-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability.

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Full PDF Text Transcription for AP1003BST-3 (Reference)

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Advanced Power Electronics Corp. AP1003BST-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Pro...

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Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) D BV DSS RDS(ON) G S 30V 4.5mΩ 17.3A ID Description The AP1003BST-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The GreenFETTM package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters.

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