AP100N03P
Description
AP100N03P/T
30V N-Channel Enhancement Mode MOSFET
The AP100N03P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 30V ID =100 A
RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.5mΩ）
Application
Battery protection Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
TO-220-3L
AP100N03T
TO-263-3L
Marking AP100N03P XXX YYYY AP100N03T XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol VDSS
Parameter Drain-Source Voltage
VGSS
Gate-Source Voltage
ID@TC=25℃ ID@TC=100℃
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Pulsed Drain Current note1
Single Pulsed Avalanche Energy note2
PD@TC=25℃ RθJA RθJA RθJC
Total Power Dissipation4 Thermal Resistance Junction-ambient (Steady...
