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AP100N03P - 30V N-Channel Enhancement Mode MOSFET

General Description

The AP100N03P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V ID =100 A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.5mΩ）.

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Datasheet Details

Part number AP100N03P
Manufacturer APM
File Size 1.41 MB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP100N03P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP100N03P/T 30V N-Channel Enhancement Mode MOSFET The AP100N03P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =100 A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.