AP100N02D
Description
20V N-Channel Enhancement Mode MOSFET
The AP100N02D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 20V ID =100A RDS(ON) < 3.5mΩ@ VGS=4.5V (Type：2.8mΩ)
Application Battery protection Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
TO252-3L
AP100N02D XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDSS
Drain-Source Voltage
Max. 20
VGSS ID@TC=25℃ ID@TC=100℃
IDM EAS PD RθJC TJ, TSTG
Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2
Power Dissipation Thermal Resistance, Junction to Case Operating and Storage Temperature Range
±12 100 59 360 110 81...
