AP100N02D - 20V N-Channel Enhancement Mode MOSFET

APM

General Description

operation with gate voltages as low as 2.5V.

Battery protection or in other Switching application.

Key Features

VDS = 20V ID =100A RDS(ON) < 3.5mΩ@ VGS=4.5V (Type：2.8mΩ).

📥 Download Datasheet

AP100N02D 20v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP100N02D
Manufacturer	APM
File Size	576.60 KB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	AP100N02D Datasheet

Other Datasheets by APM

Part Number	Description
AP100N03BD	30V N-Channel Enhancement Mode MOSFET
AP100N03D	30V N-Channel Enhancement Mode MOSFET
AP100N03P	30V N-Channel Enhancement Mode MOSFET
AP100N03T	30V N-Channel Enhancement Mode MOSFET
AP100N06NF	60V N-Channel Enhancement Mode MOSFET
AP100N10NF	100V N-Channel Enhancement Mode MOSFET
AP100N20MP	200V N-Channel Enhancement Mode MOSFET
AP10G03S	30V N+P-Channel Enhancement Mode MOSFET
AP10H03DF	30V N+N-Channel Enhancement Mode MOSFET
AP10H03LI	30V N+N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Description AP100N02D 20V N-Channel Enhancement Mode MOSFET The AP100N02D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =100A RDS(ON) < 3.5mΩ@ VGS=4.5V (Type：2.8mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP100N02D TO252-3L AP100N02D XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage Max.