NP3P06MR mosfet equivalent, 60v p-channel enhancement mode mosfet.
* VDS =-60V，ID =-3A RDS(ON)(Typ)=123.5mΩ @VGS=-10V RDS(ON)(Typ)=160mΩ @VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired <.
General Features
* VDS =-60V，ID =-3A RDS(ON)(Typ)=123.5mΩ @VGS=-10V RDS(ON)(Typ)=160mΩ @VGS=-4.5V
* High power.
Schematic diagram
The NP3P06MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications.
General Features
* VDS =-60V，ID =-3A RDS(ON)(Typ)=1.
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