NP3095G mosfet equivalent, 30v n-channel enhancement mode mosfet.
* VDS =30V，ID =95A RDS(ON)(Typ.)=4.3mΩ @VGS=10V RDS(ON)(Typ.)=6.9mΩ @VGS=4.5V
* High power and current handing capability
* Lead free product is acquired
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General Features
* VDS =30V，ID =95A RDS(ON)(Typ.)=4.3mΩ @VGS=10V RDS(ON)(Typ.)=6.9mΩ @VGS=4.5V
* High power an.
Schematic diagram
The NP3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =30V，ID =95A RDS(ON)(Typ.)=4.3mΩ @VGS=10V RDS(.
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