NP32N055HDE mosfet equivalent, n-channel power mosfet.
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A.
FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10.
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 .
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