NP3007DR - 30V P-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	NP3007DR
Manufacturer	natLinear
File Size	283.67 KB
Description	30V P-Channel Enhancement Mode MOSFET
Datasheet	NP3007DR Datasheet
Additional preview pages of the NP3007DR datasheet.

Product details

Description

Schematic diagram The NP3007DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.This device is suitable for use as a load switch or in PWM applications.S G General

Features

D.
VDS =-30V，ID =-7A RDS(ON)(Typ. )=28mΩ @VGS=-10V RDS(ON)(Typ. )=36mΩ @VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

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Published: Jul 23, 2024 |