* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 16 A)
* Low Ciss : Ciss = 1100 pF TYP.
* Bui.

FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 .

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 16 A)
* Low.

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