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NP32N055HHE - N-Channel MOSFET

Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 16 A).
  • Low Ciss : Ciss = 1100 pF TYP.
  • Built-in gate protection diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 16 A) • Low Ciss : Ciss = 1100 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP32N055HHE NP32N055IHE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP32N055SHE TO-252 (JEDEC) / MP-3ZK Note Not for new design.
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