NP30N06QDK Datasheet PDF - Renesas Dual N-channel Power MOSFET Specs

NP30N06QDK - Dual N-channel Power MOSFET

Datasheet Summary

Description

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance  RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 21 m MAX. (VGS = 4.5 V, ID = 7.5 A).
Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V).
Designed for automotive.

Datasheet Details

Part number	NP30N06QDK
Manufacturer	Renesas
File Size	479.78 KB
Description	Dual N-channel Power MOSFET
Datasheet	NP30N06QDK Datasheet
Additional preview pages of the NP30N06QDK datasheet.

📁 Similar Datasheet

NP3007DR - 30V P-Channel Enhancement Mode MOSFET (natlinear)

NP3065D6 - 30V N-Channel Enhancement Mode MOSFET (natlinear)

NP3095G - 30V N-Channel Enhancement Mode MOSFET (natlinear)

NP32N055HDE - N-Channel Power MOSFET (NEC)

NP32N055HLE - N-Channel Power MOSFET (NEC)

NP32N055IDE - N-Channel Power MOSFET (NEC)

NP32N055ILE - N-Channel Power MOSFET (NEC)

NP32N055SDE - N-Channel Power MOSFET (NEC)

NP3302MF01 - COLOR PLASMA DISPLAY MODULE (NEC)

NP3400MR-S - N-Channel Enhancement Mode MOSFET (natlinear)

Full PDF Text Transcription

Click to expand full text

Data Sheet NP30N06QDK 60 V – 30 A – Dual N-channel Power MOS FET Application: Automotive R07DS1332EJ0200 Rev.2.00 May 24, 2018 Description NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 21 m MAX. (VGS = 4.5 V, ID = 7.5 A)  Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified  Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation.

Published: Jan 14, 2024 |