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NP33N075YDF
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0363EJ0100 Rev.1.00
Jun 30, 2011
Description
The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 28 mΩ MAX. (VGS = 10 V, ID = 17 A)
• Low Ciss: Ciss = 1300 pF TYP. (VDS = 25 V, VGS = 0 V) • Logic level drive type • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON
Ordering Information
Part No. NP33N075YDF-E1-AY ∗1 NP33N075YDF-E2-AY ∗1
Lead Plating Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.