NP3065D6 mosfet equivalent, 30v n-channel enhancement mode mosfet.
Marking and pin assignment
* VDS =30V，ID =65A
RDS(ON)(Typ.)=6.3mΩ @VGS=10V
RDS(ON)(Typ.)=9mΩ @VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very.
XXXX—Wafer Information YYYY—Quality Code
Ordering Information
Part Number NP3065D6-G
Storage Temperature -55°C to +1.
Schematic diagram
The NP3065D6 uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combinati.
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