60V Datasheet | Specifications & PDF Download

FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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IPT008N06NM5LF MOSFET OptiMOSTM 5 Linear FET, 60 V Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf

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STB200N6F3, STI200N6F3 STP200N6F3 N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET™ Power MOSFET Features Type STB200N6F3 STI200N6F3 STP200

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UMW AO4828 60V Dual N-ChanneI MOSFET 1.Description The AO4828 uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera

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L-4060VH/2GD 1.8 mm Bi-Level Circuit Board Indicator DESCRIPTION The Green source color devices are made with Gallium Phosphide Green Light Emitting

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Features De

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Datasheet 180KHz 60V 5A Switching Current Boost DC/DC Converter XL6019 Features  Wide 5V to 40V Input Voltage Range  Positive or Negative Output

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JW5121 Parameters Subject to Change Without Notice 60V/2A Asynchronous Step-Down Converter DESCRIPTION The JW®5121 is a current mode monolithic buc

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TPMNG30H General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technolog

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60V, 7A Dual N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFS6010T2 uses advanced trench technology and design to provide excellent RDS(on) with low

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S8MBG036 60V N+P Dual Channel MOSFETs General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DM

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TPMNG30HA D D G G S S SOT-323 Features ‧RDS(ON)≦3Ω@VGS=10V ‧Improved dv/dt capability ‧Fast switching ‧Green Device Available 60V N-Channel M

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SLP65R170E7/SLF65R170E7 SLP65R170E7 / SLF65R170E7 650V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced

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9975GM-VB 9975GM-VB Datasheet Dual N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = 10 V 60 0.015 a

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9974GP-VB 9974GP-VB Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.011 at VGS = 10 V 0.013 at VGS = 4.5 V ID (

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UMW SI2308A 60V N-ChanneI MOSFET 1.Features VDS(V)=60V ID=3A(VGS=10V) RDS(ON)<80mΩ(VGS=10V), ID=3A RDS(ON)<95mΩ(VGS=4.5V), ID=1.9A 3.Pinning informa

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200N6F3-VB TO220 200N6F3-VB TO220 Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) ()

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TVMNG30H 60V N-Channel MOSFET S G D SOT-883 Features ‧RDS(ON) ≦3Ω@VGS=10V ‧RDS(ON) ≦4Ω@VGS=4.5V ‧High Density Cell Design For Ultra Low On-Resistanc

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60V, 50A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFX6005T uses advanced trench technology and design to provide excellent RDS(on) with low gate

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60V,12A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFE6001T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate

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