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NP32N055SDE - N-Channel Power MOSFET

Download the NP32N055SDE datasheet PDF. This datasheet also covers the NP32N055HDE variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A).
  • Low Ciss : Ciss = 1300 pF TYP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP32N055HDE-NEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NP32N055SDE
Manufacturer NEC
File Size 204.41 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NP32N055SDE Datasheet

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Other Datasheets by NEC

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP. ORDERING INFORMATION PART NUMBER PACKAGE NP32N055HDE NP32N055IDE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP32N055SDE Note Not for new design.
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