NP3007DR Datasheet PDF - natlinear 30V P-Channel Enhancement Mode MOSFET Specs

NP3007DR - 30V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP3007DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

D.
VDS =-30V，ID =-7A RDS(ON)(Typ. )=28mΩ @VGS=-10V RDS(ON)(Typ. )=36mΩ @VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

Datasheet Details

Part number	NP3007DR
Manufacturer	natLinear
File Size	283.67 KB
Description	30V P-Channel Enhancement Mode MOSFET
Datasheet	NP3007DR Datasheet
Additional preview pages of the NP3007DR datasheet.

📁 Similar Datasheet

NP30N04QUK - Dual N-channel Power MOSFET (Renesas)

NP30N06QDK - Dual N-channel Power MOSFET (Renesas)

NP32N055HDE - N-Channel Power MOSFET (NEC)

NP32N055HHE - N-Channel MOSFET (Renesas)

NP32N055HLE - N-Channel Power MOSFET (NEC)

NP32N055IDE - N-Channel Power MOSFET (NEC)

NP32N055IHE - N-Channel MOSFET (Renesas)

NP32N055ILE - N-Channel Power MOSFET (NEC)

NP32N055SDE - N-Channel Power MOSFET (NEC)

NP32N055SHE - N-Channel MOSFET (Renesas)

Full PDF Text Transcription

Click to expand full text

NP3007DR 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3007DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G General Features D  VDS =-30V，ID =-7A RDS(ON)(Typ.)=28mΩ @VGS=-10V RDS(ON)(Typ.)=36mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Application Marking and pin assignment DFN2*2-6L-B （Thickness 0.

Published: Jul 23, 2024 |