GTVA107001FC gan equivalent, high power rf gan.
* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle - Output power P3d.
The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.
GTVA107001EC Package H-36248-2
Gain (dB), Efficiency (%)
Power Sweep, Pulsed CW
VDS = 50 V, IDQ = 100 mA.
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