GTVA126001EC hemt equivalent, 600w high power rf gan hemt.
* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1200 MHz, 50 V,
300 μs pulse width, 10% duty cycle
* Output power.
The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band. They feature input matching, high efficiency, and thermally-enhanced packages.
Features
* GaN on SiC HEM.
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