GTVA104001FA gan equivalent, high power rf gan.
input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
Gain (dB)
Performance at 1% Duty Cycle
VDS = 50 V, IDQ = 100 mA, 12.
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.4 GHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
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