Datasheet4U Logo Datasheet4U.com

GTVA212701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band.

Key Features

  • input matching, high efficiency, and a thermally-enhanced earless package. Package Types: H-87265J-2 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Gain 20 40 16 20 Efficiency 12 0 8 -20 4 0 25 PAR @ 0.01% CCDF -40 g212701fa-gr1 -60 30 35 40 45 50 55 Average Output Power (dBm) Features.
  • GaN on SiC HEMT technology.
  • Input matched.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GTVA220701FA Thermally-Enhanced High Power RF GaN HEMT Infineon
GTVA221701FA Thermally-Enhanced High Power RF GaN HEMT Infineon
GTVA261701FA Thermally-Enhanced High Power RF GaN HEMT Infineon
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT CREE
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT Wolfspeed

Other Datasheets by MACOM Technology Solutions

Part Number Description
GTVA126001EC 600W High Power RF GaN HEMT
GTVA126001FC 600W High Power RF GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Description The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package. Package Types: H-87265J-2 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Gain 20 40 16 20 Efficiency 12 0 8 -20 4 0 25 PAR @ 0.