GTVA212701FA Overview
Description
The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package.
Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance (class AB), 2180 MHz, 48 V, 10 µs pulse width, 10% duty cycle
- Output power P3dB = 300 W
- Drain efficiency = 68.5%
- Gain = 17.5 dB
- Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
- Capable of handling 10:1 VSWR @ 48 V, 56.2 W (WCDMA) output power
