GTVA212701FA hemt equivalent, thermally-enhanced high power rf gan on sic hemt.
input matching, high efficiency, and a thermally-enhanced earless package.
Package Types: H-87265J-2
Peak/Average Ratio (dB), Gain (dB) Efficiency (%)
Single-carrier W.
The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package.
Package Types: H-87265J-2
Peak/.
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