GTVA212701FA Description
The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band.
GTVA212701FA Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance (class AB), 2180 MHz, 48 V, 10 µs pulse width, 10% duty cycle
- Output power P3dB = 300 W
- Drain efficiency = 68.5%
- Gain = 17.5 dB
- Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
- Capable of handling 10:1 VSWR @ 48 V, 56.2 W (WCDMA) output power
- Low thermal resistance
- Pb-free and RoHS-pliant