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GTVA220701FA Datasheet, Infineon

GTVA220701FA hemt equivalent, thermally-enhanced high power rf gan hemt.

GTVA220701FA Avg. rating / M : 1.0 rating-11

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GTVA220701FA Datasheet

Features and benefits

input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
* Input matched
* Typical Pulsed CW performance, 2170 MHz, 48 V.

Application

It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
* Inpu.

Description

The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Feat.

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GTVA220701FA Page 1 GTVA220701FA Page 2 GTVA220701FA Page 3

TAGS

GTVA220701FA
Thermally-Enhanced
High
Power
GaN
HEMT
Infineon

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