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GTVA220701FA - Thermally-Enhanced High Power RF GaN HEMT

Infineon

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Datasheet Details

Part number: GTVA220701FA
Manufacturer: Infineon ↗
File Size: 119.48 KB
Datasheet: GTVA220701FA-Infineon.pdf
Description: Thermally-Enhanced High Power RF GaN HEMT

GTVA220701FA Product details

Description

The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications..

Features

input matching, high efficiency, and a thermally-enhanced package with earless flange. Features.
Input matched.
Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB.
Capable of handling 10:1 VSWR @48 V, 70 W (CW) output power.
GaN HEMT technology.
High power density.
High efficiency.
RoHS-compliant Advance Specification Data Sheets describe products that are being cons.

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