GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT

CREE

Description

GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 * 2690 MHz .
The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applicati.

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Datasheet Specifications

Part number: GTVA261701FA
Manufacturer: CREE
File Size: 450.26 KB
Datasheet: GTVA261701FA-CREE.pdf
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. GTVA261701FA Package H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 32 80 28 24 E

GTVA261701FA Distributors

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GTVA261701FA Thermally-Enhanced High Power GaN SiC HEMT CREE

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