GTVA262701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

Wolfspeed

Datasheet Details

Part number	GTVA262701FA
Manufacturer	Wolfspeed
File Size	344.96 KB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTVA262701FA-Wolfspeed.pdf

The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. GTVA262701FA Package H-87265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz. 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 20 Gain 16 Efficiency 60 40 20 12 0 8 PAR @ 0.01% CCDF -20 4 -40 Features.
GaN on SiC HEMT technology.
Input matched.
Typical pulsed CW performance: 10 µs puls.

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Published: Jun 28, 2019 |