GTVA262701FA hemt equivalent, thermally-enhanced high power rf gan on sic hemt.
input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
GTVA262701FA Package H-87265J-2
Peak/Average Ratio, Gain (dB) Effic.
It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
GTVA2.
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earle.
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