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GTVA262701FA Datasheet, Wolfspeed

GTVA262701FA hemt equivalent, thermally-enhanced high power rf gan on sic hemt.

GTVA262701FA Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 344.96KB)

GTVA262701FA Datasheet
GTVA262701FA
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 344.96KB)

GTVA262701FA Datasheet

Features and benefits

input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. GTVA262701FA Package H-87265J-2 Peak/Average Ratio, Gain (dB) Effic.

Application

It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. GTVA2.

Description

The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earle.

Image gallery

GTVA262701FA Page 1 GTVA262701FA Page 2 GTVA262701FA Page 3

TAGS

GTVA262701FA
Thermally-Enhanced
High
Power
GaN
SiC
HEMT
Wolfspeed

Manufacturer


Wolfspeed

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