GTVA261701FA datasheet, hemt equivalent, Infineon

Features and benefits

input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
* Input Matched
* Typical Pulsed CW performance, 2690 MHz, 48 V.

Application

It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
* Inpu.

Description

The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Fea.

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