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GTVA261701FA Datasheet, Wolfspeed

GTVA261701FA hemt equivalent, thermally-enhanced high power rf gan on sic hemt.

GTVA261701FA Avg. rating / M : 1.0 rating-11

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GTVA261701FA Datasheet

Features and benefits

input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-ca.

Application

It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37.

Description

The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flan.

Image gallery

GTVA261701FA Page 1 GTVA261701FA Page 2 GTVA261701FA Page 3

TAGS

GTVA261701FA
Thermally-Enhanced
High
Power
GaN
SiC
HEMT
Wolfspeed

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