GTVA261701FA hemt equivalent, thermally-enhanced high power rf gan on sic hemt.
input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37265J-2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-ca.
It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37.
The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flan.
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