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GTVA126001FC Datasheet, MACOM

GTVA126001FC hemt equivalent, 600w high power rf gan hemt.

GTVA126001FC Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 430.25KB)

GTVA126001FC Datasheet
GTVA126001FC Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 430.25KB)

GTVA126001FC Datasheet

Features and benefits


* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle
* Output power.

Description

The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band. They feature input matching, high efficiency, and thermally-enhanced packages. Features
* GaN on SiC HEM.

Image gallery

GTVA126001FC Page 1 GTVA126001FC Page 2 GTVA126001FC Page 3

TAGS

GTVA126001FC
600W
High
Power
GaN
HEMT
MACOM

Manufacturer


MACOM

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