GTVA126001FC, GTVA126001EC - Thermally-Enhanced High Power RF GaN HEMT

Wolfspeed

Datasheet Details

Part number	GTVA126001FC, GTVA126001EC
Manufacturer	Wolfspeed
File Size	436.96 KB
Description	Thermally-Enhanced High Power RF GaN HEMT
Datasheet	GTVA126001EC-Wolfspeed.pdf
Note	This datasheet PDF includes multiple part numbers: GTVA126001FC, GTVA126001EC. Please refer to the document for exact specifications by model.

The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.

GaN on SiC HEMT technology.
Input matched.
Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power (P3dB) = 600 W - Drain efficiency = 65% - Gain = 18 dB.
Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 µs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA.
Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001).
Pb-free and.

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Published: Jun 28, 2019 |