GTVA123501FA
Description
The GTVA123501FA is a 350-watt Ga N on Si C high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
Gain (d B) Efficiency (%)
Power Sweep, Pulsed CW
VDS = 50 V, IDQ = 100 m A 300 μs pulse width, 10% duty cycle
22 21 20 19 18 17 16 15
Gain: 1200 MHz Gain: 1300 MHz
Gain: 1400 MHz Eff: 1200 MHz
Eff: 1300 MHz Eff: 1400 MHz g123501fa_gr300-1
10 0
50 100 150 200 250 300 350 400 450
Output Power (W)
GTVA123501FA Package H-37265J-2
Features
- Ga N on Si C HEMT technology
- Input matched
- Typical pulsed CW performance: pulse width = 300 μs, duty cycle = 10%, 1200
- 1400 MHz, VDS = 50 V, IDQ = 100 m A
- Output power = 350 W min @ P3d B
- Drain Efficiency = 70 %
- Gain = 18 d B
- Human Body Model Class 1B...
