GTVA123501FA
Overview
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance: pulse width = 300 μs, duty cycle = 10%, 1200 - 1400 MHz, VDS = 50 V, IDQ = 100 mA - Output power = 350 W min @ P3dB - Drain Efficiency = 70 % - Gain = 18 dB
- Human Body Model Class 1B (
