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GTVA123501FA - Thermally-Enhanced High Power RF GaN

Wolfspeed

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Datasheet Details

Part number: GTVA123501FA
Manufacturer: Wolfspeed
File Size: 187.83 KB
Datasheet: GTVA123501FA-Wolfspeed.pdf
Description: Thermally-Enhanced High Power RF GaN

GTVA123501FA Product details

Description

The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band..

Features

input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Efficiency (%) Power Sweep, Pulsed CW VDS = 50 V, IDQ = 100 mA 300 μs pulse width, 10% duty cycle 22 21 20 19 18 17 16 15 0 80 70 60 50 40 Gain: 1200 MHz Gain: 1300 MHz 30 Gain: 1400 MHz Eff: 1200 MHz 20 Eff: 1300 MHz Eff: 1400 MHz g123501fa_gr300-1 10 0 50 100 150 200 250 300 350 400 450 Output Power (W) GTVA123501FA Package H-37265J-2 Features.
GaN on SiC HE.

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Thermally-Enhanced High Power GaN Wolfspeed

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