GTVA123501FA gan equivalent, thermally-enhanced high power rf gan.
input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
Gain (dB) Efficiency (%)
Power Sweep, Pulsed CW
VDS = 50 V, IDQ = 1.
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
Gain .
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