GTVA123501FA Description
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band.
GTVA123501FA Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance: pulse width = 300 μs
- 1400 MHz, VDS = 50 V, IDQ = 100 mA
- Output power = 350 W min @ P3dB
- Drain Efficiency = 70 %
- Gain = 18 dB
- Human Body Model Class 1B (