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WNMD2162 - Dual N-Channel MOSFET

Description

The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package PDFN2.9×2.8-8L.

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Datasheet Details

Part number WNMD2162
Manufacturer Will Semiconductor
File Size 1.21 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2162 Datasheet
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Full PDF Text Transcription

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WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.016@ VGS=4.5V 0.019@ VGS=3.1V 0.022@ VGS=2.5V The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2162 is Pb-free and Halogenfree . Http//:www.willsemi.com PDFN2.9×2.8-8L D2 D2 87 D1 6 D1 5 Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package PDFN2.9×2.8-8L Applications  Driver for Relay, Solenoid, Motor, LED etc.
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