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Vishay Intertechnology Electronic Components Datasheet

Si4818DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4818DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
0.0155 @ VGS = 10 V
0.0205 @ VGS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.50 V @ 1.0 A
ID (A)
6.3
5.4
9.5
8.2
IF (A)
2.0
D1 D2 D2 D2
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D2
6 D2
5 D2
Top View
Ordering Information: Si4818DY
Si4818DY-T1 (with Tape and Reel)
Schottky Diode
G1 G2
S1
N-Channel 1
MOSFET
S2 A
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
20
6.3 5.3 9.5 7.0
5.4 4.2 7.6 5.6
30 40
1.3 0.9 2.2 1.15
1.4 1.0 2.4 1.25
0.9 0.64 1.5 0.80
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJC
Document Number: 71122
S-31062β€”Rev. B, 26-May-03
Channel-1
Typ Max
72 90
100 125
51 63
Channel-2
Typ Max
43 53
82 100
25 30
Schottky
Typ Max
48 60
80 100
28 35
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si4818DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

No Preview Available !

Si4818DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = 20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 9.5 A
VGS = 4.5 V, ID = 5.4 A
VGS = 4.5 V, ID = 8.2 A
VDS = 15 V, ID = 6.3 A
VDS = 15 V, ID = 9.5 A
IS = 1.3 A, VGS = 0 V
IS = 1 A, VGS = 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
1.0
20
30
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Channel-1
VDS = 15 V, VGS = 5 V, ID = 6.3 A
Channel-2
VDS = 15 V, VGS = 5 V, ID = - 9.5 A
Channel-1
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Channel-2
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.3 A, di/dt = 100 A/ms
IF = 2.2 A, di/dt = 100 mA/ms
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1.5
0.5
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Typa Max Unit
100
100
1
100
15
2000
0.018
0.0125
0.024
0.0165
17
28
0.7
0.47
0.022
0.0155
0.030
0.0205
1.1
0.5
V
nA
mA
A
W
S
V
8.0 12
15 23
1.75
5.3
nC
3.2
4.6
6.1
W
2.6
10 20
15 30
5 10
5 10
26 50
44 80 ns
8 16
12 24
30 60
32 70
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
VF
Irm
CT
IF = 1.0 A
IF = 1.0 A, TJ = 125_C
Vr = 30 V
Vr = 30 V, TJ = 100_C
Vr = - 30 V, TJ = 125_C
Vr = 10 V
Typ
0.47
0.36
0.004
0.7
3.0
50
Max
0.50
0.42
0.100
10
20
Unit
V
mA
pF
www.vishay.com
2
Document Number: 71122
S-31062β€”Rev. B, 26-May-03


Part Number Si4818DY
Description Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Maker Vishay Siliconix
Total Page 8 Pages
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