SI4814DY
FEATURES r DS(on) (W)
0.021 @ VGS = 10 V 0.0325 @ VGS = 4.5 V 0.020 @ VGS = 10 V 0.0265 @ VGS = 4.5 V
ID (A)
7.0 5.6 7.4 6.4
D LITTLE FOOTr Plus Integrated Schottky D Alternative Pinning for Additional Layout Options D 100% Rg Tested
APPLICATIONS
D DC/DC Converters
- Notebook
D1
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V) Diode Forward Voltage
0.50 V @ 1.0 A
IF (A)
SO-8
D1 D1 G2 S2 1 2 3 4 Top View Ordering Information: Si4814DY Si4814DY-T1 (with Tape and Reel) 8 7 6 5 G1 S1/D2 S1/D2 S1/D2
G1 N-Channel 1 MOSFET S1/D2
G2 N-Channel 2 MOSFET S2
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1 Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Channel-2 10 secs
30 20
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
Steady State
Unit
7.0 5.6 40 1.7 1.9...
