TP65H035WSQA fet equivalent, 650v gan fet.
* JEDEC-qualified GaN technology
* Junction temperature rating of 175C
* Dynamic RDS(on) production tested
* Robu.
The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performan.
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