TP65H035WS
Description
The TP65H035WS 650V, 35mΩ Gallium Nitride (Ga N) FET is a normally-off device. It bines state-of-the-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance.
Transphorm Ga N offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature
- AN0009: Remended External Circuitry for Ga N FETs
- AN0003: Printed Circuit Board Layout and Probing
- AN0010: Paralleling Ga N FETs
Ordering Information
Part Number
Package
3 lead TO-247
Package Configuration
Source
TP65H035WS TO-247 (top view)
GS D
Cascode Schematic Symbol
June 13, 2018 tp65h035w.1
Cascode Device Structure
Features
- JEDEC qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient...
