TP65H035G4QS
Description
The TP65H035G4QS 650V, 35 mΩ gallium nitride (Ga N) FET is a normally-off device using Renesas’s Gen IV platform. It bines a state-of-the-art high voltage Ga N HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Related Literature
- Remended External Circuitry for Ga N FETs
- Printed Circuit Board Layout and Probing
- Low cost driver solution
Ordering Information
Part Number TP65H035G4QS-TR
Package
Package Configuration
10x12mm TOLL
Source
- “-TR” suffix refers to tape and reel. Refer to AN0012 for details.
TP65H035G4QS TOLL
(bottom view)
Pin 9
Pin 10
Pin 11
Features
- JEDEC qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
-...
