TP65H035G4YS
Description
The TP65H035G4YS 650V, 35 mΩ gallium nitride (Ga N) FET is a normally-off device using Renesas’s Gen IV platform. It bines a state-of-the-art high voltage Ga N HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Related Literature
- Remended External Circuitry for Ga N FETs
- Printed Circuit Board Layout and Probing
Ordering Information
Part Number
Package
TP65H035G4YS 4 lead TO-247
Package Configuration
Source
TP65H035G4YS TO-247 (top view)
Features
- JEDEC qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss
Benefits
-...
