TP65H070L - 650V GaN FET

Product Overview

Datasheet Details

Part number	TP65H070L
Manufacturer	Transphorm
File Size	1.04 MB
Description	650V GaN FET
Datasheet	TP65H070L Datasheet
Additional preview pages of the TP65H070L datasheet.

Product details

Description

The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. offering superior reliability and performance. AN0009: Recommended External Circuitry for GaN FETs AN0003: Printed Circuit Board Layout and Probing

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Improves efficiency/operation frequencies over Si.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system s.

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Published: Apr 29, 2019 |