TP65H070LDG
Description
The TP65H070L 650V, 72mΩ Gallium Nitride (Ga N) FET are normally-off devices. It bines state-of-the-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance.
Transphorm Ga N offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature
- AN0009: Remended External Circuitry for Ga N FETs
- AN0003: Printed Circuit Board Layout and Probing
- AN0010: Paralleling Ga N FETs
Ordering Information
Part Number
Package
TP65H070LDG TP65H070LSG
8 x 8mm PQFN 8 x 8mm PQFN
Package Configuration
Drain
Source
TP65H070LDG 8x8 PQFN
(bottom view)
TP65H070LSG 8x8 PQFN
(bottom view)
Features
- JEDEC qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- Ro HS pliant and...
