TP65H050BS - GaN FET

Product Overview

Datasheet Details

Part number	TP65H050BS
Manufacturer	Transphorm
File Size	1.69 MB
Description	GaN FET
Datasheet	TP65H050BS Datasheet
Additional preview pages of the TP65H050BS datasheet.

Product details

Description

The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device. offering superior reliability and performance. AN0009: Recommended External Circuitry for GaN FETs AN0003: Printed Circuit Board Layout and Probin

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.

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Published: Aug 10, 2020 |