TP65H050BS
Description
The TP65H050BS 650V, 50mΩ Gallium Nitride (Ga N) FET is a normally-off device. It bines state-of-the-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance.
Transphorm Ga N offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature
- AN0009: Remended External Circuitry for Ga N FETs
- AN0003: Printed Circuit Board Layout and Probing
- AN0010: Paralleling Ga N FETs
Ordering Information
Part Number
Package
TO-263
Package Configuration mon Source
TP65H050BS TO-263 (top view)
Features
- JEDEC qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- Ro HS pliant and Halogen-free packaging
Benefits
- Enables AC-DC bridgeless totem-pole PFC designs...
