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MOSFETs Silicon N-channel MOS (U-MOS-H)
SSM6K361NU
1. Applications
• Power Management Switches • DC-DC Converters
2. Features
(1) 4.5 V drive (2) Low drain-source on-resistance
: RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)
3. Packaging and Pin Assignment
UDFN6B
SSM6K361NU
1, 2, 5, 6: Drain 3: Gate 4: Source
©2016-2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2016-12
2020-04-17 Rev.7.0
SSM6K361NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
3.5
A
Drain current (pulsed)
(Note 1), (Note 2)
IDP
14
Power dissipation
(Note 3)
PD
1.
SSM6K361NU Datasheet
