K4S51323PF-MF datasheet, mobile-sdram equivalent, Samsung semiconductor

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Features and benefits

1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2.

Application

ORDERING INFORMATION Part No. K4S51323PF-M(E)F75 K4S51323PF-M(E)F90 K4S51323PF-M(E)F1L Max Freq. 133MHz(CL=3),83MHz(CL.

Description

The K4S51323PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

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