K4S513233F-MEC
FEATURES
- 3.0V & 3.3V power supply.
- LVCMOS patible with multiplexed address.
- Four banks operation.
- MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
- EMRS cycle with address key programs.
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation.
- Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh)
- DQM for masking.
- Auto refresh.
- 64ms refresh period (8K cycle).
- mercial Temperature Operation (-25°C ~ 70°C).
- 2Chips DDP 90Balls FBGA ( -MXXX -Pb, -EXXX -Pb Free).
Mobile SDRAM ..
GENERAL DESCRIPTION
The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and...
