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K4S513233F-ML - Mobile SDRAM

Download the K4S513233F-ML datasheet PDF. This datasheet also covers the K4S513233F variant, as both devices belong to the same mobile sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Key Features

  • 3.0V & 3.3V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S513233F_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4S513233F-ML (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S513233F-ML. For precise diagrams, and layout, please refer to the original PDF.

K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operati...

View more extracted text
ly. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • 2Chips DD

More Datasheets from Samsung Semiconductor

Part Number Description
K4S513233F-MC Mobile SDRAM
K4S513233F-MEC Mobile SDRAM
K4S513233F-MEF Mobile SDRAM
K4S513233F-MEL Mobile SDRAM
K4S513233F-MF Mobile SDRAM
K4S51323LF-MC 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MEC 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MEF 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MEL 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MF 4M x 32Bit x 4 Banks Mobile SDRAM