K4S513233F-MC Datasheet | Samsung Semiconductor

K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA Features - 3.0V & 3.3V power supply. - LVCMOS patible with multiplexed address. - Four banks operation. - MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). - EMRS cycle with address key programs. - All inputs are sampled at the positive going edge of the system clock. - Burst read single-bit write operation. - Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh) - DQM for masking. - Auto refresh. - 64ms refresh period (8K cycle). - mercial Temperature Operation (-25°C ~ 70°C). - 2Chips DDP 90Balls FBGA ( -MXXX -Pb, -EXXX -Pb Free). Mobile SDRAM .. GENERAL DESCRIPTION The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4S513233F-M(E)C/L/F75 K4S513233F-M(E)C/L/F1H K4S513233F-M(E)C/L/F1L Max Freq. 133MHz(CL=3), 111MHz(CL=2) 111MHz(CL=2) 111MHz(CL=3)- 1, 83MHz(CL2) LVCMOS 90 FBGA Pb (Pb Free) Interface Package - M(E)C/L/F : Normal / Low / Low Power, mercial Temperature(-25°C ~ 70°C) NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as ponents in general and scientific puters such as, by way of example, mainframes, servers, work stations or desk top...