K4S51323LF-MC
Description
The K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Key Features
- VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V
- Four banks operation
- EMRS cycle with address key programs
- All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation
- DQM for masking
- Auto refresh
- 64ms refresh period (8K cycle)
- mercial Temperature Operation (-25°C ~ 70°C)
- 2Chips DDP 90Balls FBGA ( -MXXX -Pb, -EXXX -Pb Free)
