K4S51323LF-MEF datasheet, sdram equivalent, Samsung semiconductor

Features and benefits

* VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS l.

Application

ORDERING INFORMATION Part No. K4S51323LF-M(E)C/L/F75 K4S51323LF-M(E)C/L/F1H K4S51323LF-M(E)C/L/F1L Max Freq. 133MHz(CL.

Description

The K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

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