STPSC31H12C-Y diode equivalent, power schottky silicon carbide diode.
* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high-voltage periphery
* PPAP capabl.
* OBC (on board battery chargers)
* PHEV - EV charging stations
* Resonant LLC topology
* PFC functions .
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Du.
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